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TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
Rev. 01 -- 25 August 2008 Product data sheet
1. General description
The TFF1004HN/N1 is an integrated downconverter for use in Low Noise Block (LNB) convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
2. Features
I I I I I I Pre-amplifier, mixer, buffer amplifier and PLL synthesizer in one IC Alignment-free concept Crystal controlled LO frequency generation Low phase noise Switched LO frequency (9.75 GHz and 10.6 GHz) Low spurious
3. Applications
I Ku band LNB converters for digital satellite reception (DVB-S)
4. Quick reference data
Table 1. Quick reference data VCC = 3.3 V; Tamb = 25 C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 unless otherwise specified. Symbol Parameter VCC ICC NFSSB supply voltage supply current single sideband noise figure Conditions RF input and IF output AC coupled RF input and IF output AC coupled low band high band Gconv conversion gain low band high band
[1] [1][2] [2][3][4][5 ] [2][4][5][6 ] [2][3][5] [2][5][6]
Min Typ Max Unit 3.0 26 26 3.3 9 9 32 32 3.6 10 10 35 35 V mA dB dB dB dB 102 125
NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
Table 1. Quick reference data ...continued VCC = 3.3 V; Tamb = 25 C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 unless otherwise specified. Symbol Parameter IP3O Conditions Min Typ Max Unit output third-order intercept point carrier power = -10 dBm (measured at output); worst case is given. low band high band
[2][3][7][8 ] [2][6][7][8 ]
10 10
-
-
dBm dBm
[1] [2] [3] [4] [5] [6] [7] [8]
DC values. See corresponding graph in Section 13.1.2 "Parameters as function of temperature". Low band conditions: PRF_IN = -50 dBm; fLO = 9.75 GHz; fRF_IN = 10.70 GHz to 11.70 GHz; fIF_OUT = 950 MHz to 1950 MHz. Measured with band-pass filter according to Figure 4 and Figure 5. See corresponding graph in Section 13.1.1 "Parameters as function of frequency". High band conditions: PRF_IN = -50 dBm; fLO = 10.6 GHz; fRF_IN = 11.70 GHz to 12.75 GHz; fIF_OUT = 1100 MHz to 2150 MHz. measured in 50 environment and calculated back towards a 75 environment. measured with carriers depicted in Table 10.
5. Ordering information
Table 2. Ordering information Package Name TFF1004HN/N1 HVQFN24 Description plastic, heatsink very thin quad flat package; no leads; 24 terminals; body 4 x 4 x 0.85 mm Version SOT616-1 Type number
TFF1004HN_N1_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 August 2008
2 of 19
NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
6. Block diagram
VCC(MIX) 24 RF1_GND RF1_GND RF_IN RF2_GND RF2_GND 19 20 21 22 23 10 12
mixer
13 14 15 16 17 18
VCC(IF) IF_GND IF_GND IF_OUT IF_GND IF_GND
REG_V_VCO VCO_GND VCC(XO) 5 6 3 4 VCC(PLL) 2 PFD CHARGE PUMP PLL_LF 11
XO_TANK XO_XTAL XO_GND
TFF1004HN
BANDGAP VOLTAGE REFERENCE CIRCUIT
DIVIDER
7 LO_SEL
1 PLL_GND GND
8 BG_GND
9 VCC(BG)
001aai387
Fig 1.
TFF1004HN/N1 block diagram
7. Functional diagram
LO_SEL
VCC
TFF1004HN/N1
mixer IF gain
PLL
9.75/10.6 GHz
001aai388
Fig 2.
Functional diagram
TFF1004HN_N1_1
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Product data sheet
Rev. 01 -- 25 August 2008
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NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
8. Pinning information
8.1 Pinning
23 RF2_GND 22 RF2_GND 20 RF1_GND 19 RF1_GND 18 IF_GND 17 IF_GND 16 IF_OUT 15 IF_GND 14 IF_GND 13 VCC(IF) REG_V_VCO 10 PLL_LF 11 VCO_GND 12 7 8 9 VCC(BG)
001aai389
24 VCC(MIX)
terminal 1 index area PLL_GND VCC(PLL) XO_GND VCC(XO) XO_TANK XO_XTAL 1 2 3 4 5 6
TFF1004HN/N1
LO_SEL
Transparent top view
Fig 3.
Pin configuration
8.2 Pin description
Table 3. Symbol GND PLL_GND VCC(PLL) XO_GND VCC(XO) XO_TANK XO_XTAL LO_SEL BG_GND VCC(BG) PLL_LF VCO_GND VCC(IF) IF_GND IF_OUT RF1_GND
TFF1004HN_N1_1
Pin description Pin 0 1 2 3 4 5 6 7 8 9 11 12 13 16 19, 20 Description ground (exposed die pad) ground [1] PLL supply voltage. Decouple against pin 1. ground [1] crystal oscillator supply voltage. Decouple against pin 3. crystal oscillator tank 50 MHz. Crystal connection. Connect other crystal terminal to GND. select high or low band [2] ground [1] internal regulator supply. Decouple against pin 8. decoupling of the internal VCO supply loop filter PLL. Connect loop filter between this pin and pin 10. ground [1] IF-buffer supply voltage. Decouple against pin 14. IF-buffer output. Connect RF choke coil between this pin and pin 13. ground [1]
(c) NXP B.V. 2008. All rights reserved.
REG_V_VCO 10
14, 15, 17, 18 ground [1]
Product data sheet
Rev. 01 -- 25 August 2008
BG_GND
21 RF_IN
4 of 19
NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
Pin description ...continued Pin 21 22, 23 24 Description RF input. AC coupling required. ground [1] mixer supply voltage. Decouple against pin 23.
Table 3. Symbol RF_IN RF2_GND VCC(MIX)
[1] [2]
Connect this to the exposed die pad. See Table 4.
Table 4. (V) 0 VCC open
LO_SEL local oscillator frequency (GHz) 9.75 10.60 10.60
LO_SEL (pin 7)
9. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCC(BG) VCC(IF) VCC(PLL) VCC(XO) Tj Tstg Parameter band gap supply voltage IF supply voltage PLL supply voltage XO supply voltage junction temperature storage temperature Conditions Min -0.5 -0.5 -0.5 -0.5 Max +3.6 +3.6 +3.6 +3.6 125 125 Unit V V V V C C
10. Recommended operating conditions
Table 6. Symbol Tamb Z0 Table 7. Mode Operating conditions Parameter ambient temperature characteristic impedance Selection of crystal Frequency (MHz) fundamental overtone
[1] [2] [3]
Conditions
Min -40 -
Typ +25 50
Max +85 -
Unit C
Load capacitor (pF) 0 [1] 0
[1]
Frequency stability (ppm) 50 [2] 50
[2]
Quartz cut
Maximum drive level (W) 100 100
Tank circuit
50 50
AT-cut AT-cut
not used used [3]
Series resonant. The LO will have the same frequency stability. The components of the tank circuit are selected to form a parallel resonance at 50 MHz. The input capacitance at XO_TANK (pin 5) is 3 pF.
(c) NXP B.V. 2008. All rights reserved.
TFF1004HN_N1_1
Product data sheet
Rev. 01 -- 25 August 2008
5 of 19
NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
The tank circuit should have no DC path between VCC(XO) (pin 4) and XO_TANK (pin 5), therefore the inductive branch should contain a DC block.
11. Thermal characteristics
Table 8. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 24 Unit K/W
12. Characteristics
Table 9. Characteristics VCC = 3.3 V; Tamb = 25 C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 unless otherwise specified. Symbol VCC ICC n(itg) Parameter supply voltage supply current integrated phase noise density Conditions RF input and IF output AC coupled RF input and IF output AC coupled integration offset frequency = 10 kHz to 13 MHz; loop bandwidth = crossover bandwidth low band high band NFSSB Gconv Gconv single sideband noise low band figure high band conversion gain conversion gain variation low band high band low band high band in every 36 MHz band; high band and low band s11 s22 IP3O input reflection coefficient output reflection coefficient output third-order intercept point with optimum matching structure fIF_OUT = 950 MHz to 2150 MHz; Z0 = 75 carrier power = -10 dBm (measured at output); worst case is given. low band high band L(RF)lo local oscillator RF leakage center frequency = local oscillator frequency; span = 100 MHz; RBW = 50 kHz; VBW = 200 kHz low band high band L(IF)lo local oscillator IF leakage center frequency = local oscillator frequency; span = 100 MHz; RBW = 50 kHz; VBW = 200 kHz low band high band resp(sp)IF_OUT spurious response on center frequency = 1.6 GHz; pin IF_OUT span frequency = 1.2 GHz; RBW = 30 kHz; VBW = 100 kHz
TFF1004HN_N1_1
Min Typ Max Unit
[1] [1][2]
3.0 -
3.3
3.6
V mA
102 125
[2][3] [2][4] [2][3][5][6] [2][4][5][6] [2][3][6] [2][4][6] [2][3] [2][4] [6] [6]
26 26 -
9 9 32 32 -
2.5 2.5 10 10 35 35 5 5 1.5 -10 -10
RMS RMS dB dB dB dB dB dB dB dB dB
[7]
[2][3][7][8] [2][4][7][8]
10 10
-
-
dBm dBm
[2][3][9] [2][4][9]
-
-
-35 -35
dBm dBm
[2][3][10] [2][4][10] [10]
-
-
-15 -15 -60
dBm dBm dBm
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 August 2008
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NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
[1] [2] [3] [4] [5] [6] [7] [8] [9]
DC values. See corresponding graph in Section 13.1.2 "Parameters as function of temperature". Low band conditions: PRF_IN = -50 dBm; fLO = 9.75 GHz; fRF_IN = 10.70 GHz to 11.70 GHz; fIF_OUT = 950 MHz to 1950 MHz. High band conditions: PRF_IN = -50 dBm; fLO = 10.6 GHz; fRF_IN = 11.70 GHz to 12.75 GHz; fIF_OUT = 1100 MHz to 2150 MHz. Measured with band-pass filter according to Figure 4 and Figure 5. See corresponding graph in Section 13.1.1 "Parameters as function of frequency". measured in 50 environment and calculated back towards a 75 environment. measured with carriers depicted in Table 10. measured with spectrum analyzer at RF_IN (pin 21); IF_OUT (pin 16) terminated with 50 .
[10] measured with spectrum analyzer at IF_OUT (pin 16); RF_IN (pin 21) terminated with 50 via DC block.
Table 10. Band
IP3O carriers RF frequency Carrier #2 (GHz) 10.78 11.66 11.78 12.71 IP3O low frequency (MHz) 950 1830 1100 2030 IF frequency Carrier#1 (MHz) 990 1870 1140 2070 IF frequency Carrier#2 (MHz) 1030 1910 1180 2110 IP3O high frequency (MHz) 1070 1950 1220 2150
RF frequency Carrier #1 (GHz) 10.74 11.62 11.74 12.67
Low High
40 (dB) 0 s11 s22
001aai390
0 (dB) -1
001aai391
s12 s21
-2 -40 s12 -80 s21 -3
-4
-120 0 5 10 15 f (GHz) 20
-5 9 10 11 12 13 f (GHz) 14
Fig 4.
Filter SEI FSCM:67021
Fig 5.
Filter SEI FSCM:67021
TFF1004HN_N1_1
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Product data sheet
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NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
13. Application information
L2 27 nH
IF_OUT
C11 100 pF
C5 100 nF
IF_GND 18 RF1_GND 19
IF_GND 17
IF_OUT 16
IF_GND 15
IF_GND 14
VCC(IF) 13 12 VCO_GND
C8 1 nF
RF1_GND
20
11
PLL_LF
C9 820 pF
C10 220 nF R1 120
RF_IN
RF_IN
21
10
REG_V_VCO
TFF1004HN
RF2_GND 22 9 VCC(BG)
C4 100 nF
VCC 3.3 V
C12 47 F
RF2_GND
23
8
BG_GND
VCC(MIX) 24
C1 100 pF
7 2 PLL_GND VCC(PLL)
C2 100 pF
LO_SEL
LO_SEL
1
3
4 XO_GND VCC(XO)
C3 100 nF C6 18 pF
5
6 XO_TANK XO_XTAL
X1 50 MHz; series ESR < 70
L1 470 nH
C7 4.7 nF
001aai392
For list of components see Table 11.
Fig 6.
Application diagram of TFF1004HN/N1 Table 11. List of components The Printed Circuit Board (PCB) is a Rogers RO4223 (r = 3.38); thickness = 0.51 mm. For application diagram, see Figure 6. Component Description C1 C2 C3 C4 decoupling of RF and MIX domain decoupling of PLL domain decoupling of XO domain decoupling of BG domain
Rev. 01 -- 25 August 2008
Value 100 pF 100 pF 100 nF 100 nF
Remarks
TFF1004HN_N1_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
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NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
Table 11. List of components ...continued The Printed Circuit Board (PCB) is a Rogers RO4223 (r = 3.38); thickness = 0.51 mm. For application diagram, see Figure 6. Component Description C5 C6 C7 C8 C9 C10 C11 C12 L1 L2 R1 X1
[1]
Value 100 nF 18 pF 1 nF 820 pF 220 nF 100 pF 47 F 470 nH 27 nH 120 50 MHz
[1] [1] [1] [1]
Remarks
decoupling of IF domain XO_TANK circuit (only with overtone crystal) REG_V_VCO decoupling loop filter loop filter output capacitor main supply decoupling and 22 kHz rejection XO_TANK circuit (only with overtone crystal) RF choke at 2.15 GHz loop filter crystal; series resonant; ESR < 70
See Table 7.
XO_TANK circuit, DC coupling (only with overtone crystal) 4.7 nF
maximum value 1 nF
UAF3000
SUPPLY AND BAND/POLARIZATION SWITCHING 3.3 V REGULATOR
horizontal polarization 1st STAGE LNA
image reject filter
LO_SEL
VCC
TFF1004HN/N1
mixer IF gain
RF gain
vertical polarization 1st STAGE LNA
2nd STAGE LNA PLL
9.75/10.6 GHz
001aai393
Fig 7.
TFF1004HN/N1 in practice
TFF1004HN_N1_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 August 2008
9 of 19
NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
13.1 Graphs
13.1.1 Parameters as function of frequency
001aai394 001aai395
-60 n (dBc/Hz) -80
-60 n (dBc/Hz) -80
-100
-100
-120
-120
-140 103
104
105
106
107
108 109 foffset (Hz)
-140 103
104
105
106
107
108 109 foffset (Hz)
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 8.
Phase noise density as function of offset frequency (low band); typical values
Fig 9.
Phase noise density as function of offset frequency (high band); typical values
10 NFSSB (dB) 9
001aai396
34 Gconv (dB) 33
001aai397
8
32
(1)
(2)
7
(1) (2)
31
6
30
5 10 11 12 f (GHz) 13
29 10 11 12 f (GHz) 13
(1) low band (2) high band VCC = 3.3 V.
(1) low band (2) high band VCC = 3.3 V.
Fig 10. Noise figure as function of frequency; typical values
Fig 11. Conversion gain as function of frequency; typical values
TFF1004HN_N1_1
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Product data sheet
Rev. 01 -- 25 August 2008
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NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
90 +1 135 +0.5 10.70 GHz +0.2 12.75 GHz 11.70 GHz +5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 10 0 0
-0.2
-5
-135
-0.5 -1 -90
-2
-45 1.0
001aai398
Tamb = 25 C; ICC = 102 mA; VCC = 3.3 V; Z0 = 50 .
Fig 12. Input reflection coefficient (S11) without matching structure; typical values
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 5 10 0 0
+0.2 950 MHz 180 0 0.2 0.5 1 2
+5
-0.2
2150 MHz
-5
-135
-0.5 -1 -90
-2
-45 1.0
001aai399
Tamb = 25 C; ICC = 102 mA; VCC = 3.3 V; Z0 = 50 .
Fig 13. Output reflection coefficient (S22); typical values
TFF1004HN_N1_1
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Product data sheet
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NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
13.1.2 Parameters as function of temperature
001aai400
160 ICC (mA) 120
80
40
0 -50
-20
10
40
70 100 Tamb (C)
VCC = 3.3 V.
Fig 14. Supply current as function of temperature; typical values
2.6 n(itg) ( RMS) 2.4
001aai401
2.6 n(itg) ( RMS) 2.4
001aai402
2.2
2.2
2.0
2.0
1.8 -50
-20
10
40
70 100 Tamb (C)
1.8 -50
-20
10
40
70 100 Tamb (C)
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 15. Integrated phase noise density as function of temperature (low band); typical values
Fig 16. Integrated phase noise density as function of temperature (high band); typical values
TFF1004HN_N1_1
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Product data sheet
Rev. 01 -- 25 August 2008
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TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
10 NFSSB (dB) 9
001aai403
10 NFSSB (dB) 9
001aai404
8
8
7
7
6
6
5 -50
-20
10
40
70 100 Tamb (C)
5 -50
-20
10
40
70 100 Tamb (C)
VCC = 3.3 V; fLO = 9.75 GHz; fIF = 1525 MHz.
VCC = 3.3 V; fLO = 10.6 GHz; fIF = 1525 MHz.
Fig 17. Single sideband noise figure as function of temperature (low band); typical values
Fig 18. Single sideband noise figure as function of temperature (high band); typical values
35 Gconv (dB) 34
001aai405
35 Gconv (dB) 34
001aai406
33
33
32
32
31
31
30 -50
-20
10
40
70 100 Tamb (C)
30 -50
-20
10
40
70 100 Tamb (C)
VCC = 3.3 V; fLO = 9.75 GHz; fIF = 1525 MHz.
VCC = 3.3 V; fLO = 10.6 GHz; fIF = 1385 MHz.
Fig 19. Conversion gain as function of temperature (low band); typical values
Fig 20. Conversion gain as function of temperature (high band); typical values
TFF1004HN_N1_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 August 2008
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NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
5 Gconv (dB) 4
001aai407
5 Gconv (dB) 4
001aai408
3
3
2
2
1
1
0 -50
-20
10
40
70 100 Tamb (C)
0 -50
-20
10
40
70 100 Tamb (C)
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 21. Conversion gain variation as function of temperature (low band); typical values
Fig 22. Conversion gain variation as function of temperature (high band); typical values
15 IP3O (dBm) 13
001aai409
15 IP3O (dBm) 13
001aai410
11
11
9
9
7
7
5 -50
-20
10
40
70 100 Tamb (C)
5 -50
-20
10
40
70 100 Tamb (C)
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 23. Output third-order intercept point as function of temperature (low band); typical values
Fig 24. Output third-order intercept point as function of temperature (high band); typical values
TFF1004HN_N1_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 August 2008
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NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
-40 L(RF)lo (dBm) -42
001aai411
-40 L(RF)lo (dBm) -42
001aai412
-44
-44
-46
-46
-48
-48
-50 -50
-20
10
40
70 100 Tamb (C)
-50 -50
-20
10
40
70 100 Tamb (C)
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 25. Local oscillator RF leakage as function of temperature (low band); typical values
Fig 26. Local oscillator RF leakage as function of temperature (high band); typical values
-15 L(IF)lo (dBm) -17
001aai413
-15 L(IF)lo (dBm) -17
001aai414
-19
-19
-21
-21
-23
-23
-25 -50
-20
10
40
70 100 Tamb (C)
-25 -50
-20
10
40
70 100 Tamb (C)
VCC = 3.3 V; fLO = 9.75 GHz.
VCC = 3.3 V; fLO = 10.6 GHz.
Fig 27. Local oscillator IF leakage as function of temperature (low band); typical values
Fig 28. Local oscillator IF leakage as function of temperature (high band); typical values
TFF1004HN_N1_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 August 2008
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TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
14. Package outline
HVQFN24: plastic thermal enhanced very thin quad flat package; no leads; 24 terminals; body 4 x 4 x 0.85 mm
SOT616-1
D
B
A
terminal 1 index area A A1 E c
detail X
e1
1/2 e
C b 12 vMCAB wMC 13 e y1 C y
e 7 L 6
Eh
1/2 e
e2
1
18
terminal 1 index area
24 Dh 0
19 X 2.5 scale 5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. 1 A1 0.05 0.00 b 0.30 0.18 c 0.2 D (1) 4.1 3.9 Dh 2.25 1.95 E (1) 4.1 3.9 Eh 2.25 1.95 e 0.5 e1 2.5 e2 2.5 L 0.5 0.3 v 0.1 w 0.05 y 0.05 y1 0.1
Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT616-1 REFERENCES IEC --JEDEC MO-220 JEITA --EUROPEAN PROJECTION ISSUE DATE 01-08-08 02-10-22
Fig 29. Package outline SOT616-1
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Product data sheet
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TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
15. Abbreviations
Table 12. Acronym BG DVB-S ESR IC IF Ku band LO PFD PLL RBW RF VBW VCO XO Abbreviations Description Band Gap Digital Video Broadcasting by Satellite Equivalent Series Resistance Integrated Circuit Intermediate Frequency K-under band Local Oscillator Phase Frequency Detector Phase-Locked Loop Resolution BandWidth Radio Frequency Video BandWidth Voltage-Controlled Oscillator Crystal Oscillator
16. Revision history
Table 13. Revision history Release date 20080825 Data sheet status Product data sheet Change notice Supersedes Document ID TFF1004HN_N1_1
TFF1004HN_N1_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 August 2008
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TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
17. Legal information
17.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
17.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
TFF1004HN_N1_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 August 2008
18 of 19
NXP Semiconductors
TFF1004HN/N1
Integrated mixer oscillator PLL for satellite LNB
19. Contents
1 2 3 4 5 6 7 8 8.1 8.2 9 10 11 12 13 13.1 13.1.1 13.1.2 14 15 16 17 17.1 17.2 17.3 17.4 18 19 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Recommended operating conditions. . . . . . . . 5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application information. . . . . . . . . . . . . . . . . . . 8 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Parameters as function of frequency . . . . . . . 10 Parameters as function of temperature. . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 August 2008 Document identifier: TFF1004HN_N1_1

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